IndiumV3, Main, Repository, bibRecord, 00C327

InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts

Identifieur interne : 00C327 ( Main/Repository ); précédent : 00C326; suivant : 00C328

InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts

Auteurs : RBID : Pascal:03-0349686

Descripteurs français

Pascal (Inist)
- 8560J, 7340C, Etude expérimentale, Diode électroluminescente, Contact électrique, Semiconducteur III-V, Recuit thermique rapide, Résistance contact, Electroluminescence, Transmission lumière, Spectre visible, Effet haute température.

English descriptors

KwdEn :
- Contact resistance, Electric contacts, Electroluminescence, Experimental study, High-temperature effects, III-V semiconductors, Light emitting diodes, Light transmission, Rapid thermal annealing, Visible spectra.

Abstract

Ni (5 nm)/Au (5 nm) and Ni (5 nm)/indium-tin-oxide (ITO) (60 nm) films were deposited onto glass substrates, p-GaN epitaxial layers and nitride-based light-emitting diode (LED) structures. It was found that the normalized transmittance of subjected to rapid thermal annealing at 300°C Ni/ITO film (300°C-RTA) could reach 90.1% at 460 nm, which was much larger than that of the Ni/Au film. It was also found that the specific contact resistances were 5.0 × 10-4 Ωcm2, 1.3 × 10-3 Ωcm2 and 7.2 × 10-4 Ωcm2 for the Ni/Au, Ni/ITO and 300°C-RTA Ni/ITO contacts on p-GaN, respectively. Nitride-based LEDs with these p-contact layers were also fabricated. It was found that the LED with the 300°C-RTA Ni/ITO p-contact has a reasonably small operation voltage (i.e., 3.29 V at 20 mA). The 20 mA output intensity of the LED with the 300°C-RTA Ni/ITO p-contact is also 65% larger than that of the LED with the Ni/Au p-contact. © 2003 The Japan Society of Applied Physics

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<front><div type="abstract" xml:lang="en">Ni (5 nm)/Au (5 nm) and Ni (5 nm)/indium-tin-oxide (ITO) (60 nm) films were deposited onto glass substrates, p-GaN epitaxial layers and nitride-based light-emitting diode (LED) structures. It was found that the normalized transmittance of subjected to rapid thermal annealing at 300°C Ni/ITO film (300°C-RTA) could reach 90.1% at 460 nm, which was much larger than that of the Ni/Au film. It was also found that the specific contact resistances were 5.0 × 10-4 Ωcm2, 1.3 × 10-3 Ωcm2 and 7.2 × 10-4 Ωcm2 for the Ni/Au, Ni/ITO and 300°C-RTA Ni/ITO contacts on p-GaN, respectively. Nitride-based LEDs with these p-contact layers were also fabricated. It was found that the LED with the 300°C-RTA Ni/ITO p-contact has a reasonably small operation voltage (i.e., 3.29 V at 20 mA). The 20 mA output intensity of the LED with the 300°C-RTA Ni/ITO p-contact is also 65% larger than that of the LED with the Ni/Au p-contact. © 2003 The Japan Society of Applied Physics</div>
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   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:03-0349686
   |texte=   InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts
}}

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InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts

InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts

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